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US 11,699,750 B2Granted
Gallium nitride epitaxial structures for power devices
AssigneeQROMIS, Inc.
InventorsVladimir Odnoblyudov, Steve Lester, Ozgur Aktas
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Abstract
A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal expansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.
Claims22
An epitaxial semiconductor structure comprising:
- an engineered substrate having a substrate coefficient of thermal expansion, the engineered substrate comprising:
- a polycrystalline ceramic core;
- a barrier layer encapsulating the polycrystalline ceramic core;
- a bonding layer coupled to the barrier layer;
- and
- a single crystalline silicon layer coupled to the bonding layer;
- a buffer layer coupled to the single crystalline silicon layer;
- a silicon nitride partial layer coupled to the buffer layer;
- and
- an epitaxial layer formed on the silicon nitride partial layer, wherein the epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.
7 more elements
An epitaxial semiconductor structure comprising:
- an engineered substrate characterized by a substrate coefficient of thermal expansion and comprising:
- a polycrystalline ceramic core;
- a barrier layer encapsulating the polycrystalline ceramic core;
- a bonding layer coupled to the barrier layer;
- and
- a single crystalline silicon layer coupled to the bonding layer;
- a buffer layer coupled to the single crystalline silicon layer;
- a silicon nitride partial layer coupled to the buffer layer;
- and
- a gallium nitride (GaN) epitaxial layer formed on the silicon nitride partial layer, wherein the GaN epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.
7 more elements
Dependencies are inferred from the claim text.