Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof

A structure comprising:

• a first semiconductor layer of gallium nitride;
• a second semiconductor layer of a compound based on a ternary or quaternary alloy of gallium nitride on the first semiconductor layer, the second semiconductor layer including a thickness in a range of 5 nm and 30 nm, the second semiconductor layer including a first region and a second region;
• an insulation layer in contact with the first region of the second semiconductor layer and absent from the second region of the second semiconductor layer, the insulation layer including a dielectric material that has a lattice mismatch with respect to an aluminum gallium nitride of the second semiconductor layer in a range of 1% and 20%;
• and
• a first source or drain structure extending through the insulation layer, the first source or drain structure terminates at an interface between the first semiconductor layer and the second semiconductor layer.

A device, comprising:

• a gallium nitride layer;
• a semiconductor barrier layer on the gallium nitride layer;
• an insulation layer on the semiconductor barrier layer;
• a first electrode extending through the insulation layer and in contact with the semiconductor barrier layer;
• a second electrode extending on a first side of the first electrode through the insulation layer, through the semiconductor barrier layer, and in contact with the gallium nitride layer;
• and
• a third electrode extending on a second side of the first electrode, opposite the first side of the first electrode, through the insulation layer, and in contact with the semiconductor barrier layer, the third electrode terminates at an interface between the gallium nitride layer and the semiconductor barrier layer.