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US 11,699,736 B2Granted
Gate structure and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Liang Cheng
Life of this patent
Estimating the term…
Abstract
A device includes a substrate, a semiconductor channel over the substrate, and a gate structure over and laterally surrounding the semiconductor channel. The gate structure includes a first dielectric layer over the semiconductor channel, a first work function metal layer over the first dielectric layer, a first protection layer over the first work function metal layer, a second protection layer over the first protection layer, and a metal fill layer over the second protection layer.
Claims20
A device, comprising:
- a substrate;
- a semiconductor channel over the substrate;
- and
- a gate structure over and laterally surrounding the semiconductor channel, comprising:
- a first dielectric layer over the semiconductor channel;
- a first work function metal layer over and in physical contact with the first dielectric layer;
- a first protection layer over the first work function metal layer;
- a second protection layer over the first protection layer;
- and
- a metal fill layer over the second protection layer,
- a third protection layer over the first protection layer and the second protection layer;
- and
- a capping layer in physical contact with the first protection layer and the first work function metal layer.
10 more elements
A device, comprising:
- a first gate structure comprising:
- a first dielectric layer over a first semiconductor channel;
- a first work function metal layer over the first dielectric layer;
- a first protection layer over the first work function metal layer;
- a second protection layer over the first protection layer;
- and
- a first metal fill layer over the second protection layer;
- and
- a second gate structure comprising:
- a second dielectric layer over a second semiconductor channel;
- a first barrier layer over the second dielectric layer;
- a second work function metal layer over the first barrier layer;
- a third protection layer over the second work function metal layer;
- and
- a second metal fill layer over the third protection layer;
- wherein the first protection layer and the third protection layer are in-situ silane passivation layers.
13 more elements
A method, comprising:
- forming a first dielectric layer over a first channel;
- forming a first barrier layer over the first dielectric layer;
- forming a first work function metal layer over the first dielectric layer;
- removing the first barrier layer;
- forming a first protection layer over the first work function metal layer;
- forming a second protection layer over the first protection layer;
- and
- forming a first metal fill layer over the second protection layer;
- wherein the first work function metal layer is formed over the first barrier layer.
6 more elements
Dependencies are inferred from the claim text.