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US 11,699,735 B2Granted
Gate structure and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Liang Cheng
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Abstract
A device comprises a substrate, a semiconductor channel over the substrate, and a gate structure over and laterally surrounding the semiconductor channel. The gate structure comprises a first dielectric layer comprising a first dielectric material including dopants. A second dielectric layer is on the first dielectric layer, and comprises a second dielectric material substantially free of the dopants. A metal fill layer is over the second dielectric layer.
Claims20
A device, comprising:
- a substrate;
- a semiconductor channel over the substrate;
- and
- a gate structure over and laterally surrounding the semiconductor channel, comprising:
- a first dielectric layer comprising a first dielectric material including dopants;
- a second dielectric layer on the first dielectric layer, and comprising a second dielectric material substantially free of the dopants;
- and
- a metal fill layer over the second dielectric layer, wherein a greatest concentration of the dopants decreases as a distance from the metal fill layer increases.
5 more elements
A device, comprising:
- a first gate structure comprising:
- a first dielectric layer comprising a first dielectric material including dopants;
- a second dielectric layer on the first dielectric layer, and comprising a second dielectric material substantially free of the dopants;
- and
- a first metal fill layer over the second dielectric layer;
- and
- a second gate structure comprising:
- a third dielectric layer comprising a third dielectric material, wherein concentration of dopants in the third dielectric material is different than concentration of dopants in the first dielectric material;
- a fourth dielectric layer on the third dielectric layer, and comprising a fourth dielectric material substantially free of the dopants;
- and
- a second metal fill layer over the fourth dielectric layer.
8 more elements
A method, comprising:
- forming a tuning dielectric layer over a first dielectric layer, wherein the first dielectric layer is over a first channel of a first gate structure and a second channel of a second gate structure;
- removing the tuning dielectric layer over the second channel;
- driving in dopants from the tuning dielectric layer to the first dielectric layer over the first channel;
- removing the tuning dielectric layer over the first dielectric layer;
- forming a second dielectric layer over the first dielectric layer;
- and
- forming a metal fill layer over the second dielectric layer.
4 more elements
Dependencies are inferred from the claim text.