Back to results
US 11,699,734 B2Granted
Semiconductor device with resistance reduction element and method for fabricating the same
AssigneeNanya Technology Corporation
InventorCheng-Ling Yang
Life of this patent
Estimating the term…
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a fin, a gate structure positioned on the fin, impurity regions positioned on two sides of the fin, contacts positioned on the impurity regions, and conductive covering layers positioned on the contacts. The conductive covering layers are formed of copper germanide.
Claims5
A semiconductor device, comprising:
- a fin;
- a gate structure positioned on the fin;
- impurity regions positioned on two sides of the fin;
- contacts positioned on the impurity regions;
- and
- top conductive layers positioned on and directly contacted with top surfaces of the contacts;
- a first dielectric layer positioned on the gate structure and a second dielectric layer positioned on the first dielectric layer, wherein the contact includes upper portions positioned along the second dielectric layer and protruding from a top surface of the second dielectric layer;
- barrier layers positioned on and directly contacted with sides of the upper portions of the contact;
- barrier spacers positioned on and directly contacted with sides of the upper portions of the barrier layers and the top surface of the second dielectric layer;
- wherein the top conductive layers are formed of titanium silicide, nickel silicide, nickel platinum silicide, tantalum silicide, or cobalt silicide.
7 more elements
Dependencies are inferred from the claim text.