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US 11,699,731 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorsTakayuki Beppu, Masayuki Kitamura, Hiroshi Toyoda, Katsuaki Natori
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Abstract
According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.
Claims14
A semiconductor device comprising:
- a plurality of insulating films adjacent to each other;
- a conductive film provided between the plurality of insulating films, the conductive film including molybdenum having a grain which extends from a first end to a second end of the conductive film in a first direction, the first direction being from one of the plurality of insulating films to another of the plurality of insulating films;
- and
- a block insulating film provided between the plurality of insulating films and the conductive film, and formed of a metal oxide.
1 more element
A semiconductor device comprising:
- a plurality of insulating films adjacent to each other;
- and
- a conductive film provided between the plurality of insulating films, the conductive film is formed of molybdenum having a grain diameter same as a width between adjacent insulating films among the plurality of insulating films.
Dependencies are inferred from the claim text.