US 11,699,728 B2Granted

Semiconductor device including fin-FET and misaligned source and drain contacts

AssigneeSamsung Electronics Co., Ltd.

InventorsChang Woo Noh, Seung Min Song, Geum Jong Bae, Dong Il Bae

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Abstract

A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.

Claims20

Dependent claims

A semiconductor device comprising:

a substrate;
a first fin, a second fin and a third fin on the substrate, wherein the second fin is between the first fin and the third fin;
a first isolation on the substrate, and between the first fin and the second fin;
a second isolation on the substrate, and between the second fin and the third fin;
a gate structure on the first fin, the second fin, the third fin, the first isolation, and the second isolation;
a first epitaxial source/drain on the first fin;
a second epitaxial source/drain on the second fin;
a third epitaxial source/drain on the third fin;
a fourth epitaxial source/drain on the first fin;
a fifth epitaxial source/drain on the second fin;
a sixth epitaxial source/drain on the third fin;
a first contact on the first epitaxial source/drain, the second epitaxial source/drain, and the third epitaxial source/drain;
a second contact on the fourth epitaxial source/drain, the fifth epitaxial source/drain, and the sixth epitaxial source/drain;
a first upper contact electrically connected to the first contact;
and
a second upper contact electrically connected to the second contact,
wherein the gate structure is between the first epitaxial source/drain and the fourth epitaxial source/drain, between the second epitaxial source/drain and the fifth epitaxial source/drain, and between the third epitaxial source/drain and the sixth epitaxial source/drain,
wherein the gate structure is between the first contact and the second contact,
wherein the first epitaxial source/drain, the second epitaxial source/drain and the third epitaxial source/drain are merged,
wherein the fourth epitaxial source/drain, the fifth epitaxial source/drain and the sixth epitaxial source/drain are merged,
wherein from a top view, the first fin, the second fin, and the third fin are between the first upper contact and the second upper contact,
wherein the first contact comprises a first end and a second end, the first end contacting the first upper contact,
wherein the second contact comprises a third end and a fourth end, the fourth end contacting the second upper contact,
wherein a distance between the first end of the first contact and the first fin is greater than a distance between the third end of the second contact and the first fin, and
wherein a distance between the fourth end of the second contact and the third fin is greater than a distance between the second end of the first contact and the third fin.

22 more elements

A semiconductor device comprising;

a substrate;
a first fin, a second fin and a third fin on the substrate, wherein the second fin is between the first fin and the third fin;
a first isolation on the substrate;
a second isolation on the substrate, and between the first fin and the second fin, wherein the first fin is between the first isolation and the second isolation;
a third isolation on the substrate, and between the second fin and the third fin;
a fourth isolation on the substrate, wherein the third fin is between the third isolation and the fourth isolation;
a gate structure on the first fin, the second fin, the third fin, the first isolation, the second isolation, the third isolation, and the fourth isolation;
a first epitaxial source/drain on the first fin;
a second epitaxial source/drain on the second fin;
a third epitaxial source/drain on the third fin, the first epitaxial source/drain, and the second epitaxial source/drain, wherein the third epitaxial source/drain is merged to form a first merged epitaxial source/drain;
a fourth epitaxial source/drain on the first fin;
a fifth epitaxial source/drain on the second fin;
a sixth epitaxial source/drain on the third fin, the fourth epitaxial source/drain, and the fifth epitaxial source/drain, wherein the sixth epitaxial source/drain is merged to form a second merged epitaxial source/drain;
a first contact on the first epitaxial source/drain, the second epitaxial source/drain and the third epitaxial source/drain;
a second contact on the fourth epitaxial source/drain, the fifth epitaxial source/drain and the sixth epitaxial source/drain;
a first upper contact crossing the gate structure and electrically connected to the first contact;
a second upper contact crossing the gate structure and electrically connected to the second contact;
a first layer on the first isolation, the first merged epitaxial source/drain and the fourth isolation, and comprising a first portion, a second portion and a third portion, wherein the first portion of the first layer contacts the first isolation, wherein the second portion of the first layer contacts the fourth isolation, and wherein the third portion of the first layer contacts the first merged epitaxial source/drain;
a second layer on the first portion of the first layer;
a third layer on the second portion of the first layer;
and
a fourth layer on the second layer, the third portion of the first layer, and the third layer,
wherein the gate structure is between the first epitaxial source/drain and the fourth epitaxial source/drain, between the second epitaxial source/drain and the fifth epitaxial source/drain, and between the third epitaxial source/drain and the sixth epitaxial source/drain,
wherein the gate structure is between the first contact and the second contact, and
wherein from a top view, the first contact and the second contact are misaligned to each other.

22 more elements

A semiconductor device comprising:

a substrate;
a first isolation on the substrate;
a second isolation on the substrate;
a fin on the substrate, and between the first isolation and the second isolation;
a first epitaxial source/drain on the fin;
a second epitaxial source/drain on the fin;
a gate structure on the fin, the first isolation, and the second isolation, and between the first epitaxial source/drain and the second epitaxial source/drain, wherein the gate structure extends in a first direction;
a first contact on the first epitaxial source/drain, wherein the first contact extends in the first direction;
a second contact on the second epitaxial source/drain, wherein the second contact extends in the first direction;
a first upper contact electrically connected to the first contact, wherein the first upper contact extends in a second direction intersecting the first direction;
and
a second upper contact electrically connected to the second contact, wherein the second upper contact extends in the second direction,
wherein the gate structure is between the first contact and the second contact,
wherein the first contact comprises a first end contacting the first upper contact and a second end contacting the first epitaxial source/drain,
wherein the second contact comprises a third end contacting the second epitaxial source/drain and a fourth end contacting the second upper contact,
wherein the second end of the first contact is spaced apart from the second upper contact in the first direction, and
wherein the third end of the second contact is spaced apart from the first upper contact in the first direction.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/127,230Filed 18 Dec 2020 · continuation
Priority: KR 10-2018-007082020 Jun 2018
Published: US 2021/0104613 A18 Apr 2021
Granted: 11 Jul 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10D 30/6219
Fin field-effect transistors [FinFET]: characterised by the source or drain electrodes
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/6212
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies having non-rectangular cross-sections
H10D 62/116
Dielectric isolations, e.g. air gaps: adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Family

Application16/205,851Parent of this continuation · filed 30 Nov 2018
US 2021/0104613 A1Pre-grant publication · published 8 Apr 2021
US 10,903,324 B2Parent of this continuation
US 2019/0393315 A1Published application
US 11,699,728 B2This patent

From the US filing history. Foreign family members aren’t listed.