Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsMakoto Shimosawa, Takeyoshi Nishimura
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including: a drift region of first conductivity type provided in a semiconductor substrate; a base region of second conductivity type provided in the semiconductor substrate; an emitter region of first conductivity type provided at a front surface of the semiconductor substrate; a contact region of second conductivity type provided on the base region and having a higher doping concentration than the base region; a contact trench portion provided at the front surface of the semiconductor substrate; a first barrier layer provided at a side wall and a bottom surface of the contact trench portion; and a second barrier layer provided in contact with the contact region at the side wall of the contact trench portion.
Claims14
A semiconductor device comprising:
- a drift region of first conductivity type provided in a semiconductor substrate;
- a base region of second conductivity type provided in the semiconductor substrate;
- an emitter region of first conductivity type provided at a front surface of the semiconductor substrate;
- a contact region of second conductivity type provided on the base region and having a higher doping concentration than the base region;
- a contact trench portion provided at the front surface of the semiconductor substrate;
- a first barrier layer provided at a side wall and a bottom surface of the contact trench portion;
- and
- a second barrier layer provided in contact with the contact region at the side wall of the contact trench portion, wherein
- the second barrier layer is a silicon oxide film, and
- a contact resistance between the second barrier layer and the emitter region is 100Ω or less.
A semiconductor device, comprising:
- a drift region of first conductivity type provided in a semiconductor substrate;
- a base region of second conductivity type provided in the semiconductor substrate;
- an emitter region of first conductivity type provided at a front surface of the semiconductor substrate;
- a contact region of second conductivity type provided on the base region and having a higher doping concentration than the base region;
- a contact trench portion provided at the front surface of the semiconductor substrate;
- a first barrier layer provided at a side wall and a bottom surface of the contact trench portion;
- and
- a second barrier layer provided in direct contact with the contact region at the side wall of the contact trench portion,
- wherein the first barrier layer is provided in direct contact with the emitter region at the side wall of the contact trench portion.
Dependencies are inferred from the claim text.