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US 11,699,726 B2Granted
Semiconductor die and method of manufacturing the same
AssigneeInfineon Technologies Austria AG
InventorsOliver Blank, Christof Altstaetter, Ingmar Neumann
Life of this patent
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Abstract
The application relates to a semiconductor die having a semiconductor body including an active region, an insulation layer on the semiconductor body, and a sodium stopper formed in the insulation layer. The sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The sodium stopper is formed of a tungsten material filling the insulation layer groove.
Claims15
A semiconductor die, comprising:
- a semiconductor body comprising an active region;
- a transistor device in the active region that comprises a source region extending to an upper surface of the semiconductor body and a drain region extending to a rear surface of the semiconductor body;
- an insulation layer on the semiconductor body;
- and
- a sodium stopper formed in the insulation layer,
- wherein the sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends around and outside of the active region,
- wherein the sodium stopper is formed of a tungsten material filling the insulation layer groove, and
- wherein in an edge termination region where the sodium stopper is formed, the semiconductor body immediately below the insulation layer is at a same potential as the drain region.
5 more elements
A semiconductor wafer, comprising:
- a semiconductor body comprising a first active region and a second active region;
- an insulation layer on the semiconductor body;
- a dicing region formed laterally between the first active region and the second active region;
- a first sodium stopper and a second sodium stopper formed in the insulation layer,
- wherein the first sodium stopper is arranged in a first insulation layer groove which intersects the insulation layer vertically and extends around the first active region,
- wherein the second sodium stopper is arranged in a second insulation layer groove which intersects the insulation layer vertically and extends around the second active region,
- wherein the first sodium stopper is formed of a tungsten material filling the first insulation layer groove,
- wherein the second sodium stopper is formed of a tungsten material filling the second insulation layer groove,
- wherein each of the first active region and the second active region comprise a transistor device that comprises a source region extending to an upper surface of the semiconductor body and a drain region extending to a rear surface of the semiconductor body,
- wherein in a region wherein the first sodium stopper is formed, the semiconductor body immediately below the insulation layer is at a same potential as the drain region of the transistor device from the first active region, and
- wherein in a region wherein the second sodium stopper is formed, the semiconductor body immediately below the insulation layer is at a same potential as the drain region of the transistor device from the second active region.
8 more elements
Dependencies are inferred from the claim text.