N-polar III-nitride device structures with a p-type layer
AssigneeMonde Wireless Inc.
InventorBrian Romanczyk
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Abstract
An N-polar III-N high-electron mobility transistor device can include a III-N channel layer over an N-face of a III-N backbarrier, wherein a compositional difference between the channel layer and the backbarrier causes a 2DEG channel to be induced in the III-N channel layer adjacent to the interface between the III-N channel layer and the backbarrier. The device can further include a p-type III-N layer over the III-N channel layer and a thick III-N cap layer over the p-type III-N layer. The III-N cap layer can cause an increase in the charge density of the 2DEG channel directly below the cap layer, and the p-type III-N layer can serve to prevent a parasitic 2DEG from forming in the III-N cap layer.
Claims17
A semiconductor device, comprising:
- a III-N backbarrier comprising one or more III-N layers, the one or more III-N layers of the III-N backbarrier comprising a first III-N layer;
- a III-N channel layer over an N-face of the first III-N layer;
- a 2DEG channel in the III-N channel layer adjacent to an interface between the III-N channel layer and the first III-N layer;
- a first p-type III-N layer over an N-face of the III-N channel layer;
- an n-type III-N layer between the III-N channel layer and the first p-type III-N layer;
- and
- a III-N cap layer over an N-face of the first p-type III-N layer;
- wherein
- the III-N channel layer and the III-N cap layer each have bandgaps that are less than a bandgap of the first III-N layer;
- the semiconductor device further comprises a second p-type III-N layer and a III-N barrier layer;
- and
- the III-N barrier layer is between the first and second p-type layers.
A semiconductor device, comprising:
- a III-N backbarrier comprising one or more III-N layers, the one or more III-N layers of the III-N backbarrier comprising a first III-N layer;
- a III-N channel layer over an N-face of the first III-N layer;
- a 2DEG channel in the III-N channel layer adjacent to an interface between the III-N channel layer and the first III-N layer;
- a first p-type III-N layer over an N-face of the III-N channel layer;
- an n-type III-N layer between the III-N channel layer and the first p-type III-N layer;
- and
- a III-N cap layer over an N-face of the first p-type III-N layer;
- wherein
- adjacent to the interface between the III-N channel layer and the first III-N layer, a conduction band energy of the first III-N layer is greater than a conduction band energy of the III-N channel layer;
- the semiconductor device further comprises a second p-type III-N layer and a III-N barrier layer;
- and
- the III-N barrier layer is between the first and second p-type layers.
Dependencies are inferred from the claim text.