Image sensor for time delay and integration imaging and a method for imaging using an array of photo-sensitive elements

An image sensor for time delay and integration (TDI) imaging comprising:

• an array of photo-sensitive elements comprising a plurality of photo-sensitive elements arranged in rows and columns of the array, wherein each photo-sensitive element comprises:
• an active layer configured to generate charges in response to incident light on the active layer;
• a charge transport layer formed of a semiconductor, wherein the charge transport layer comprises a first portion and a second portion, and wherein the second portion is laterally displaced in a direction along a column of the array in relation to the first portion;
• and
• at least a first and a second gate, each separated by a dielectric material from the charge transport layer, wherein the charge transport layer is arranged between the active layer and the first and the second gate, wherein the first gate is configured to control a potential of the first portion of the charge transport layer and the second gate is configured to control a potential of the second portion of the charge transport layer, and wherein the first and the second gates are configured for controlling movement of charges from the first portion of the charge transport layer to the second portion of the charge transport layer,
• wherein the array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element adjacent to the first photo-sensitive element in a direction along a column of the array are configured to control transfer of charges from the second portion of the charge transport layer of the first photo-sensitive element to the first portion of the charge transport layer of the second photo-sensitive element.