Imaging element, stacked imaging element, and solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorFumihiko Koga
Life of this patent
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Abstract
An imaging element has at least a photoelectric conversion section, a first transistor TR1, and a second transistor TR2, the photoelectric conversion section includes a photoelectric conversion layer 13, a first electrode 11, and a second electrode 12, the imaging element further has a first photoelectric conversion layer extension section 13A, a third electrode 51, and a fourth electrode 51C, the first transistor TR1 includes the second electrode 12 that functions as one source/drain section, the third electrode that functions as a gate section 51, and the first photoelectric conversion layer extension section 13A that functions as the other source/drain section, and the first transistor TR1 (TRrst) is provided adjacent to the photoelectric conversion section.
Claims13
A light detecting device, comprising:
- a semiconductor substrate;
- a first photoelectric conversion section disposed above the semiconductor substrate, the first photoelectric conversion section comprising:
- a first electrode;
- a second electrode;
- and
- a first photoelectric conversion layer disposed between the first electrode and the second electrode;
- and
- a second photoelectric conversion section disposed above the first photoelectric conversion section, the second photoelectric conversion section comprising:
- a third electrode;
- a fourth electrode;
- a second photoelectric conversion layer disposed between the third electrode and the fourth electrode;
- and
- a first transistor electrically coupled to one of the third electrode and the fourth electrode.
Dependencies are inferred from the claim text.