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US 11,699,716 B2Granted
Solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorsKenji Kobayashi, Toshifumi Wakano, Yusuke Otake
Life of this patent
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Abstract
An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.
Claims19
A light detecting device, comprising:
- a first pixel and a second pixel, the first pixel including a first semiconductor region and a second semiconductor region, the second pixel including a third semiconductor region and a fourth semiconductor region;
- and
- a first wiring layer including:
- a first electrode;
- a first via coupled to the first electrode and the first semiconductor region;
- and
- a second via coupled to the first electrode and the third semiconductor region,
- wherein a conductivity type of the first semiconductor region is opposite to a conductivity type of the second semiconductor region.
5 more elements
Dependencies are inferred from the claim text.