Image sensing device
AssigneeSK hynix Inc.
InventorsHa Neul Yoo, Yun Hui Yang
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Abstract
An image sensing device includes a semiconductor substrate, a material layer, a lens layer, and a lens capping layer. The semiconductor substrate includes a pixel region, which include a plurality of unit pixels, and a pixel-array peripheral region located outside of and peripheral to the pixel region. The material layer is disposed over the semiconductor substrate in the pixel region and the pixel-array peripheral region, and includes a first trench extending to a predetermined depth in the pixel-array peripheral region. The lens layer is disposed over the material layer in the pixel region and collects incident light into a unit pixel in the pixel region. The lens capping layer is disposed over the lens layer and the material layer and includes an edge region formed to fill the first trench.
Claims19
An image sensing device comprising:
- a semiconductor substrate structured to include a pixel region, which includes a plurality of unit pixels, and a pixel-array peripheral region located outside of and peripheral to the pixel region;
- a material layer disposed over the semiconductor substrate in the pixel region and the pixel-array peripheral region, and structured to include a first trench extending to a predetermined depth in the pixel-array peripheral region;
- a lens layer disposed over the material layer in the pixel region and structured as a lens for collecting incident light into a unit pixel in the pixel region;
- and
- a lens capping layer disposed over the lens layer and the material layer and structured to include an edge region formed to fill the first trench.
An image sensing device comprising:
- a semiconductor substrate structured to include a pixel region, which includes a plurality of unit pixels, and a pixel-array peripheral region outside the pixel region;
- an over-coating layer disposed over the semiconductor substrate in the pixel region and the pixel-array peripheral region, where the over-coating layer is structured to include regions extending to a predetermined depth in the semiconductor substrate;
- a lens layer disposed over the over-coating layer in the pixel region;
- and
- a lens capping layer disposed over the lens layer and the over-coating layer, and structured to include regions extending inside the over-coating layer in the pixel-array peripheral region.
An image sensing device comprising:
- an imaging pixel array including a plurality of imaging pixels structured to convert optical images to electrical signals;
- a material layer disposed over the plurality of imaging pixels and extending to outside the imaging pixel array;
- a lens layer including a plurality of lenses disposed over the material layer and structured to converge light onto the plurality of imaging pixels;
- and
- a lens capping layer including a first portion and a second portion, the first portion being disposed over the lens layer, the second portion extending from the first portion and being vertically elongated in the material layer formed outside the imaging pixel array,
- wherein at least part of the imaging pixel array is formed in a semiconductor substrate, and wherein the material layer is disposed over the semiconductor substrate and includes a trench formed outside the imaging pixel array and extending to a predetermined depth in the semiconductor substrate.
Dependencies are inferred from the claim text.