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US 11,699,658 B2Granted
Semiconductor device with metal interconnection
AssigneeSK hynix Inc.
InventorEunsung Lee
Life of this patent
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Abstract
A semiconductor device includes: a substrate; a test transistor over the substrate; and multi-level metal interconnections formed over the substrate spaced apart from the test transistor, wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection.
Claims14
A semiconductor device, comprising:
- a substrate;
- a test transistor over the substrate;
- and
- multi-level metal interconnections formed over the substrate and spaced apart from each other and from the test transistor in a vertical direction from the substrate;
- and
- contacts for connecting the metal interconnections,
- wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection, and
- wherein the contacts do not overlap with each other,
- wherein at least the lowest-level metal interconnection among the multi-level metal interconnections is a spiral metal interconnection.
6 more elements
A semiconductor device, comprising:
- a substrate including a cell region and a peripheral region;
- an inter-layer dielectric layer formed over the substrate;
- a capacitor formed over the inter-layer dielectric layer in the cell region and including a stacked structure of a lower electrode, a dielectric layer, and an upper electrode;
- a storage node contact penetrating the inter-layer dielectric layer and connecting the capacitor and the substrate in the cell region;
- multi-level cell metal interconnections formed over the capacitor of the cell region, and multi-level peripheral metal interconnections formed over the substrate of the peripheral region;
- and
- a cell pad formed over the multi-level cell metal interconnections, and a peripheral pad formed over the multi-level peripheral metal interconnections,
- wherein at least one metal interconnection among the multi-level cell metal interconnections and the peripheral metal interconnections is a spiral metal interconnection.
5 more elements
Dependencies are inferred from the claim text.