Tank circuit structure and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tsung Yen, Cheng-Wei Luo
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Abstract
A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first inductor, a second inductor and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first gate layer. The first inductor is over the first shielding layer. The second inductor is below the first substrate. The first IMD layer is between the first substrate and the first shielding layer.
Claims20
A tank circuit structure comprising:
- a first gate layer;
- a first substrate over the first gate layer;
- a first shielding layer over the first gate layer;
- a first inductor over the first shielding layer;
- a second inductor below the first substrate;
- and
- a first inter metal dielectric (IMD) layer between the first substrate and the first shielding layer.
A tank circuit structure comprising:
- a first gate layer;
- a first substrate over the first gate layer;
- a first inductor over the first gate layer;
- a first shielding layer below the first inductor;
- a second substrate below the first substrate;
- an inter level via coupled to at least the first inductor;
- and
- a first inter metal dielectric (IMD) layer between the second substrate and the first gate layer.
A method of making a tank circuit structure, the method comprising:
- forming a first gate layer below a first substrate;
- forming a first inductor over the first gate layer and a second substrate;
- forming a second inductor below the first substrate;
- forming a first shielding structure over the second substrate;
- and
- forming an inter level via in the first substrate, and electrically connected to the first inductor.
Dependencies are inferred from the claim text.