Package and manufacturing method thereof

A manufacturing method of a package, comprising:

• providing a first die;
• laterally encapsulating the first die by a first encapsulant;
• attaching the first die and the first encapsulant to a semiconductor carrier having contact vias embedded therein;
• forming first through insulating vias (TIV) in the first encapsulant, wherein the first TIVs penetrate through the first encapsulant and are electrically connected to the contact vias;
• bonding a second die to the first die;
• laterally encapsulating the second die by a second encapsulant;
• forming second TIVs in the second encapsulant, wherein the second TIVs penetrate through the second encapsulant and are electrically connected to the first TIVs and the contact vias;
• and
• forming a redistribution structure over the second die and the second encapsulant,
• wherein the contact vias, the first TIVs, and the second TIVs form an electron transmission path, and the electron transmission path is electrically connected to a ground voltage.

A manufacturing method of a package, comprising:

• laterally encapsulating first dies by a first encapsulant;
• attaching the first dies and the first encapsulant to a semiconductor carrier having contact vias embedded therein, wherein the semiconductor carrier has first regions and second regions located between two adjacent first regions, the first dies are located in the first regions, and the contact vias are located in the second regions;
• forming first through insulating vias (TIV) penetrating through the first encapsulant, wherein the first TIVs are located in the second regions;
• bonding second dies to the first dies;
• laterally encapsulating the second dies by a second encapsulant;
• forming second TIVs penetrating through the second encapsulant, wherein the second TIVs are located in the second regions and are aligned with the first TIVs, the contact vias, the first TIVs, and the second TIVs form an electron transmission path, and the electron transmission path is electrically connected to a ground voltage;
• and
• performing a singulation process to remove the electron transmission path.