Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• preparing a first group of wafers having a plurality of first semiconductor dies embedded in a first photosensitive material layer;
• forming a plurality of first through vias in the first photosensitive material layer;
• attaching at least two of the first group of wafers using a first adhesive layer to form a first structure;
• forming a first redistribution layer formed within the first adhesive layer, wherein the plurality of first through vias are connected to the first redistribution layer;
• preparing a second group of wafers having a plurality of second semiconductor dies embedded in a second photosensitive material layer;
• forming a plurality of second through vias in the second photosensitive material layer;
• attaching at least two of the second group of wafers using a second adhesive layer to form a second structure;
• forming a second redistribution layer formed within the second adhesive layer, wherein the plurality of second through vias are connected to the second redistribution layer;
• and
• connecting the first structure to the second structure with a plurality of first metal bumps.