Methods for attachment and devices produced using the methods
AssigneeAlpha Assembly Solutions Inc.
InventorsMonnir Boureghda, Nitin Desai, Anna Lifton, Oscar Khaselev, Michael T. Marczi, Bawa Singh
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Abstract
Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.
Claims28
A method of attaching a die to a substrate, the method comprising:
- disposing a paste comprising a capped nanomaterial on a substrate, wherein the capped nanomaterial comprises metal particles and a capping agent, the capped nanomaterial is dispersed in a solvent prior to disposition, and the solvent is selected from the group consisting of aliphatic alcohols having from 1 to 10 carbon atoms and aromatic compounds having aliphatic side chains that include 2-6 carbon atoms;
- disposing a die on the disposed capped nanomaterial;
- and
- sintering the capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate and form an electrical joint between the substrate and die.
A method of attaching a die to a substrate, the method comprising:
- disposing a paste comprising a capped nanomaterial on a substrate comprising a printed circuit board, wherein the capped nanomaterial comprises metal particles and a capping agent, the metal particles comprise at least one metal selected from the group consisting of gold, silver, copper, nickel, palladium, and alloys thereof, the capped nanomaterial is dispersed in a solvent prior to disposition, and the solvent selected from the group consisting of aliphatic alcohols having from 1 to 10 carbon atoms and aromatic compounds having aliphatic side chains that include 2-6 carbon atoms;
- disposing a die on the disposed capped nanomaterial;
- and
- sintering the capped nanomaterial at a temperature in the range of from 200° C. to 300° C. or less and at a pressure of from 0.2 MPa to 20 MPa to attach the die to the substrate and form an electrical joint between the substrate and die.
Dependencies are inferred from the claim text.