Back to results
US 11,699,617 B2Granted
Method for fabricating semiconductor device with alleviation feature
AssigneeNanya Technology Corporation
InventorTse-Yao Huang
Life of this patent
Estimating the term…
Abstract
The present application provides a method for fabricating a semiconductor device including providing a substrate, concurrently forming a first conductive line and a bottom contact on the substrate, concurrently forming a first conductive line spacer on a sidewall of the first conductive line and a bottom contact spacer on a sidewall of the bottom contact, forming a first insulating layer over the substrate and concurrently forming an air gap between the first conductive line spacer and the bottom contact spacer.
Claims18
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first conductive line over the substrate and extending along a first direction, and a bottom contact over the substrate and on a side of the first conductive line;
- forming a first conductive line spacer on a sidewall of the first conductive line and a bottom contact spacer on a sidewall of the bottom contact;
- forming a first insulating layer over the substrate and integrally forming an air gap between the first conductive line spacer and the bottom contact spacer;
- and
- forming a second conductive line above the bottom contact and extending along a second direction different from the first direction, wherein the first direction and the second direction are parallel to a top surface of the substrate.
3 more elements
Dependencies are inferred from the claim text.