Film deposition method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsMichiko Nakaya, Masanobu Honda
Life of this patent
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Abstract
A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.
Claims13
A film deposition method comprising. mounting an object to be processed on a stage, said object including a recess part;
- maintaining an inside of a chamber to have a predetermined pressure and cooling the stage below −20° C.;
- supplying only a low-vapor-pressure material selected from the group consisting of C4F8, C4F6, and isopropyl alcohol (IPA);
- and
- generating plasma from the supplied gas including the low-vapor-pressure material, thereby causing a precursor generated only from the low-vapor-pressure material by the plasma to be deposited on the recess part of the object to be processed, wherein the predetermined pressure inside the chamber is between 50 mTorr (6.67 Pa) and the equilibrium vapor pressure of C4F8 at the temperature of the supplied gas, and wherein the causing the precursor generated from the low-vapor-pressure material to be deposited is to deposit the precursor on the recess part, thereby filling the recess part with a flowable organic film, said flowable organic film being free of Si.
A film deposition method comprising:
- mounting an object on a stage, said object including a recess;
- cooling the stage below −20° C.;
- supplying, into the inside of a chamber, only a first gas consisting of:
- an inert gas, and
- a second gas selected from the group consisting of C4F8, C4F6 and isopropyl alcohol (IPA);
- adjusting a pressure within the chamber between 50 mTorr (6.67 Pa) and an equilibrium vapor pressure of C4F8 at a given temperature of the gas;
- depositing a flowable organic film in the recess and filling the recess with the flowable organic film by generating plasma only from the first gas.
A film deposition method comprising:
- mounting an object on a stage, said object including a recess;
- cooling the stage below −20° C.;
- supplying, into the inside of a chamber, a gas including at least one selected from the group consisting of C4F8, C4F6, and isopropyl alcohol (IPA);
- adjusting a pressure within the chamber between 50 mTorr (6.67 Pa) and an equilibrium vapor pressure of C4F8 at a given temperature of the gas;
- depositing a flowable organic film in the recess and filling the recess with the flowable organic film by generating plasma from the gas,. wherein the flowable organic film is a Si-free organic film.
Dependencies are inferred from the claim text.