Segmented multi-channel, backside illuminated, solid state detector with a through-hole for detecting secondary and backscattered electrons

A system comprising

• an electron source;
• a ceramic substrate;
• and
• a device coupled to the ceramic substrate, the device comprising:
• a vertical structure comprising an N+/P−/P+ or a P+/N−/N+ structure for full depletion through the thickness of the device, the N+/P−/P+ or a P+/N−/N+ structure including an N+ or P+ junction formed on the front side of the device, a P− or N− intrinsic layer in the middle, and a P+ or N+ layer formed on the backside of the device;
• an active area for collecting secondary electrons (SEs) and backscatter electrons (BSEs), the active area being segmented into multiple channels in order to separate detection of secondary and backscatter electrons;
• and
• a through hole placed in the center of the device to allow a primary beam to pass through the device, wherein the primary beam enters the through hole on the front side of the device.

A electron detection system comprising:

• an electron beam column including a detector for collecting secondary and backscatter electrons, the detector comprising:
• a vertical structure comprising an N+/P−/P+ or a P+/N−/N+ structure for full depletion through the thickness of the device, the N+/P−/P+ or a P+/N−/N+ structure including an N+ or P+ junction formed on the front side of the device, a P− or N− intrinsic layer in the middle, and a P+ or N+ layer formed on the backside of the device;
• an active area for collecting secondary electrons (SEs) and backscatter electrons (BSEs), the active area being segmented into multiple channels in order to separate detection of secondary and backscatter electrons;
• and
• a through hole placed in the center of the device to allow a primary beam to pass through the device, wherein the primary beam enters the through hole on the front side of the device.