Wafer processing apparatus and method for processing wafer

A wafer processing apparatus configured to process a wafer by supplying mist to a surface of the wafer, the wafer processing apparatus comprising:

• a furnace in which the wafer is arranged;
• a gas supplying device configured to supply gas into the furnace;
• a mist supplying device configured to supply the mist into the furnace;
• and
• a controller, wherein
• the controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively, and
• the controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends,
• the mist supplying device is a first mist supplying device,
• the mist is a first mist, and
• the processing step is a first processing step,
• the wafer processing apparatus further comprises a second mist supplying device configured to supply a second mist into the furnace, wherein
• the controller is configured to execute, after the first processing step, a second processing step by controlling the second mist supplying device and the gas supplying device to supply the second mist and the gas into the furnace, respectively,
• the controller is further configured to control the second mist supplying device to start supplying the second mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the second processing step starts.