Back to results
US 11,699,598 B2Granted
Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZi-Jheng Liu, Yu-Hsiang Hu, Jo-Lin Lan, Sih-Hao Liao, Chen-Cheng Kuo, Hung-Jui Kuo, Chung-Shi Liu, Chen-Hua Yu, Meng-Wei Chou
Life of this patent
Estimating the term…
Abstract
A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- plating a conductive material onto a first seed layer to form a via;
- encapsulating a first semiconductor die and the via with an encapsulant, wherein after the encapsulating the via has a first surface that is planar with both the encapsulant and the first semiconductor die and has a second surface opposite the first surface, the second surface being planar with the encapsulant and the first semiconductor die, the first surface being part of the first seed layer;
- placing a first dielectric layer over the encapsulant;
- forming a first redistribution layer over and extending through the first dielectric layer, the first redistribution layer comprising a second seed layer directly adjacent to the second surface;
- forming a low-temperature cured polyimide over the first redistribution layer, wherein a sidewall of the low-temperature cured polyimide is offset from a sidewall of the first dielectric layer by greater than 8 μm;
- forming a second redistribution layer over the low-temperature cured polyimide, the second redistribution layer comprising a second material;
- depositing a second dielectric layer located over the second redistribution layer, wherein the second dielectric layer has an adhesion to the second material of greater than about 680 kg/cm2;
- forming a third redistribution layer over the second dielectric layer, the third redistribution layer comprising a third material;
- and
- depositing a third dielectric layer located over the second redistribution layer, wherein the third dielectric layer has an adhesion to the third material of greater than about 680 kg/cm2.
7 more elements
A method of manufacturing a semiconductor device, the method comprising:
- depositing a second dielectric layer over a first redistribution layer over a first dielectric layer and an encapsulant surrounding both a via and a first semiconductor die, wherein the second dielectric layer comprises a first low-temperature cured polyimide that has been cured at a temperature of between about 200° C. and about 230° C. and for a time of between about 1 hour and about 2 hours, wherein a sidewall of the second dielectric layer is offset from a sidewall of the first dielectric layer by greater than 8 μm, wherein the curing comprises:
- a ramping stage, wherein the ramping stage increases the temperature of the second dielectric layer at a rate of about 2° C./min and about 4.8° C./min;
- a curing stage wherein the second dielectric layer is cured at a temperature of about 190° C. for about two hours;
- and
- a cooling stage, wherein the cooling stage decreases the temperature of the second dielectric layer at a rate of about 0.5° C./min and about 2.0° C./min.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- applying a first polyimide over a first dielectric material, the first dielectric material being located over a via, a first semiconductor device, and an encapsulant;
- and
- applying a second polyimide over the first polyimide, wherein the second polyimide has an exterior sidewall that has a lateral offset from an exterior sidewall of the first polyimide of at least 8 μm, the second polyimide has an adhesion to a first redistribution layer of greater than about 680 kg/cm2, wherein the first dielectric material is between the encapsulant and the first polyimide, and wherein at least a portion of the second polyimide comprises a monomer with the following formula:
Dependencies are inferred from the claim text.