Preparation method for accurate pattern of integrated circuit
AssigneeEtownip Microelectronics (Beijing) Co.,LTD.
InventorHanming Wu
Life of this patent
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Abstract
A method for preparing precise pattern of integrated circuits, which comprises the following steps: (S1) preparing a large pitch trench or circular through-hole structure with a hard mask in a first dielectric layer by lithography and etching; (S2) forming micro trench on the hard mask of the second dielectric layer at the bottom side wall of the trench or circular through-hole structure by plasma etching process; (S3) removing the first dielectric layer; (S4) opening the hard mask of the second dielectric layer at the micro trench formed on the hard mask of the second dielectric layer by plasma etching process; (S5) small pitch trench or circular through holes are prepared in the second dielectric layer.
Claims9
A method for preparing precise pattern of integrated circuit, comprising the steps:
- (S1) fabricating a plurality of first pitch trench or circular through-hole structures with a first hard mask in a first dielectric layer by lithography and etching;
- (S2) forming convex trenches on a second hard mask of a second dielectric layer at a bottom side wall of the plurality of first pitch trench or circular through-hole structures by a plasma etching process;
- (S3) removing the first dielectric layer;
- (S4) opening the second hard mask of the second dielectric layer at the convex trenches;
- (S5) preparing a plurality of second pitch trench or circular through-hole structures in the second dielectric layer;
- wherein the production of the micro trench is enhanced by adjusting the aspect ratio of the trenches or circular throughs in step (S1), and adjusting the electron temperature of the plasma in step (2).
Dependencies are inferred from the claim text.