Inverse tone pillar printing method using organic planarizing layer pillars

A method comprising:

• providing an initial semiconductor structure including an underlying substrate, a hard mask stack outward of the underlying substrate, an organic planarization layer outward of the hard mask stack, a first complementary material outward of the organic planarization layer, and a patterned photoresist layer outward of the first complementary material, wherein the patterned photoresist layer is patterned into a plurality of photoresist pillars defining a plurality of photoresist trenches;
• partially etching said first complementary material inward of said trenches, to provide first complementary material trench regions in said first complementary material;
• removing said patterned photoresist layer;
• filling said trench regions in said first complementary material with a second complementary material, wherein said second complementary material is preferentially etchable with respect to said first complementary material;
• selectively depositing a third complementary material on said second complementary material to form a plurality of third complementary material-covered regions and a plurality of intermediate regions not covered with said third complementary material, wherein said third complementary material is selected to grow selectively on said second complementary material but not directly on said first complementary material, and wherein said third complementary material is preferentially etchable with respect to said first complementary material;
• anisotropically etching said first complementary material inward of said intermediate regions but not inward of said third complementary material-covered regions;
• and
• etching said organic planarization layer, inward of said intermediate regions, to provide a plurality of organic planarization layer pillars in said organic planarization layer, said organic planarization layer pillars defining a plurality of organic planarization layer trenches in said organic planarization layer, said organic planarization layer trenches being inverted with respect to said photoresist pillars.