Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic

A method of forming a static random access memory (SRAM) region, the method comprising:

• providing (i) a first set of mandrels corresponding to a first lithography process and (ii) a second set of mandrels corresponding to a second lithography process, wherein a first mandrel of the first set of mandrels is adjacent to a first mandrel of the second set of mandrels, and wherein the first and second set of mandrels are interleaved;
• forming spacers on the first and second sets of mandrels within approximately a same time interval during which a spacer layer deposition and etch process occurs;
• and
• removing the first and second sets of mandrels to form an intermediate SRAM fin pattern, the intermediate SRAM fin pattern comprising:
• first and second intermediate SRAM fins corresponding to spacers on opposing sidewalls of the first mandrel of the first set of mandrels;
• and
• third and fourth intermediate SRAM fins corresponding to spacers on opposing sidewalls of the first mandrel of the second set of mandrels, wherein the second and third intermediate SRAM fins are adjacent intermediate SRAM fins,
• wherein a pitch between the third and fourth intermediate SRAM fins corresponds to a width of the first mandrel of the second set of mandrels plus a width of a spacer, and
• wherein a pitch between the second and third intermediate SRAM fins corresponds to a width of a space between the first mandrel of the first set of mandrels and the first mandrel of the second set of mandrels minus the width of a spacer.