Si-containing film forming precursors and methods of using the same

An atomic layer deposition (ALD) silicon metal oxide film formation process, the process comprising depositing a silicon metal oxide film on a substrate by the steps of:

• a) a step of sequentially introducing a vapor of a mono-substituted trisilylamine (TSA) precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X,
• wherein X is selected from (i) a halogen atom selected from Cl, Br or I;
• (ii) an isocyanato group [—NCO];
• (iii) an amino group [—NR1 R2];
• (iv) an N-containing C4-C10 saturated or unsaturated heterocycle;
• or (v) an alkoxy group [—O—R], and
• wherein R1, R2 and R each is selected from (x) H;
• (y) a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;
• or (z) a silyl group [SiR′3] with each R′ being independently selected from H;
• a halogen atom selected from Cl, Br, I;
• a Ci-C4 saturated or unsaturated hydrocarbyl group;
• a C1-C4 saturated or unsaturated alkoxy group;
• or an amino group [—NR3R4] with each R3 and R4 being selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;
• and
• further provided that if R1═H, then R2≠H or Me, and
• b) a step of introducing a vapor of a metal containing second precursor.