Treatment for high-temperature cleans

A method of treating a chamber, the method comprising:

• delivering an oxygen-containing precursor to a remote plasma unit;
• forming a plasma of the oxygen-containing precursor;
• delivering plasma effluents of the oxygen-containing precursor to a processing region of a semiconductor processing chamber, wherein the processing region is defined by one or more chamber components, wherein the one or more chamber components comprise an oxide coating and a carbon material, and wherein the plasma effluents are halogen-free;
• halting delivery of the plasma effluents;
• and treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents, wherein the treating rehabilitates hydrogen depletion from delivery of plasma effluents of the oxygen-containing precursor.

A method of treating a chamber comprising:

• delivering an oxygen-containing precursor to a remote plasma unit;
• forming a plasma of the oxygen-containing precursor;
• delivering plasma effluents of the oxygen-containing precursor to a processing region of a semiconductor processing chamber, wherein the processing region is defined by one or more chamber components, wherein the one or more chamber components comprise a silicon oxide coating overlying the one or more chamber components and a carbon material on regions of the silicon oxide coating;
• removing the carbon material with the plasma effluents of the oxygen-containing precursor;
• halting delivery of the plasma effluents;
• and
• treating the silicon oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents, wherein the treating rehabilitates hydrogen depletion from delivery of plasma effluents of the oxygen-containing precursor.