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US 11,699,574 B2Granted
Aluminum apparatus with aluminum oxide layer and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsRu-Chien Chiu, Bing-Hung Chen, Keith Kuang-Kuo Koai
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Abstract
In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
Claims20
A method comprising:
- chemically treating an aluminum body with at least one of an alkaline solution and an acid solution;
- performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer, wherein a voltage value applied in the anode-oxidization is substantially constant;
- and
- treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein:
- the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
- the substantially constant voltage value is in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.
3 more elements
A method comprising:
- preparing an aluminum body;
- polishing a surface of the aluminum body;
- chemically treating the surface-polished aluminum body with an alkaline solution and an acid solution;
- performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer;
- and
- treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein:
- the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
- the anode-oxidization is performed with a substantially constant voltage value in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.
5 more elements
A method comprising:
- preparing an aluminum body;
- annealing the aluminum body at a temperature of 200° C. to 400° C.;
- polishing a surface of the aluminum body after the annealing;
- chemically treating the surface-polished aluminum body with at least one of an alkaline solution and an acid solution;
- performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer;
- and
- treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein:
- the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
- the anode-oxidization is performed with a substantially constant voltage value in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.
6 more elements
Dependencies are inferred from the claim text.