System and method for hi-precision ion implantation

A method of performing an ion implantation process using a beam-line ion implanter, the method comprising:

• disposing a substrate on a platen;
• analyzing the substrate using metrology components;
• communicating data relating to the analysis of the substrate to a feedforward controller;
• processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations;
• and
• using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

A method of performing an ion implantation process using a beam-line ion implanter, the method comprising:

• disposing a substrate on a platen;
• analyzing the substrate using metrology components to determine a crystal orientation of the substrate;
• communicating data relating to the crystal orientation of the substrate to a feedforward controller;
• using the data relating to the crystal orientation of the substrate to determine miscut angles in a crystalline structure of the substrate;
• using the miscut angles to calculate offset angles required to compensate for the miscut angles;
• using a predictive model executed by the feedforward controller to modify the offset angles to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations;
• and
• using output from the predictive model to adjust operational parameters of the beam-line ion implanter.