Method and apparatus for performing a read of a flash memory using predicted retention-and-read-disturb-compensated threshold voltage shift offset values

A flash controller comprising:

• a data storage;
• a neural network engine coupled to the data storage;
• a status module to identify a current number of program and erase (PE) cycles, a current retention time and a current number of read disturbs for a flash memory;
• a control module coupled to the neural network engine, the data storage and the status module, the control module to identify threshold voltage shift offset (TVSO) values corresponding to a non-transitory-reliability-state that corresponds to the identified current number of PE cycles for the flash memory, the control module to select a configuration file of a retention-and-read-disturb (RRD)-compensating regression neural network (RNN) corresponding to the current number of PE cycles, the identified current retention time and current number of read disturbs, and to load the selected configuration file of the RRD-compensating RNN into the neural network engine to form an RNN core in the neural network engine,
• the neural network engine to perform a neural network operation of the RNN core to predict RRD-compensated TVSO values, the input to the neural network operation including the identified TVSO values,
• wherein a respective output neuron of the selected RRD-compensating RNN corresponds to a single respective input neuron of the respective RRD-compensating RNN and generates a corresponding respective predicted RRD-compensated TVSO value;
• and
• a read module coupled to the status module and to the neural network engine, the read module to perform a read of the flash memory using the predicted RRD-compensated TVSO values.