Double interleaved programming of a memory device in a memory sub-system

A method comprising:

• identifying a first plurality of groups of programming distributions, wherein each group comprises a subset of programming distributions associated with a portion of a memory array of a memory device configured as quad-level (QLC) memory;
• during a first pass of a multi-pass programming operation, coarsely programming memory cells in the portion configured as QLC memory to initial values representing a second plurality of pages of host data;
• storing, in a portion of the memory array of the memory device configured as single-level cell (SLC) memory and in response to completion of the first pass of the multi-pass programming operation, a respective indicator for each memory cell of the coarsely programmed memory cells to indicate a respective associated one of the first plurality of groups of programming distributions;
• and
• during a second pass of the multi-pass programming operation, reading the coarsely programmed initial values from the first pass based on the indicator of the first plurality of groups of programming distributions and finely programming the memory cells in the portion configured as QLC memory to final values representing the second plurality of pages of host data.

A method comprising:

• identifying four groups of programming distributions, wherein each group comprises four of 16 programming distributions associated with a first portion of a memory array of a memory device storing multiple bits of data per memory cell;
• during a first pass of a multi-pass programming operation, coarsely programming memory cells in the first portion of the memory array to initial values representing four pages of host data;
• in response to completion of the first pass of the multi-pass programming operation, storing, in a second portion of the memory array of the memory device storing one bit of data per cell, a respective indicator for each memory cell of the coarsely programmed memory cells to indicate a respective associated one of the four groups of programming distributions;
• and
• during a second pass of the multi-pass programming operation, reading the coarsely programmed initial values from the first pass based on the indicator of the four groups of programming distributions and finely programming the memory cells in the first portion of the memory array to final values representing the second plurality of pages of host data.