Nonvolatile memory device and method of programing with capability of detecting sudden power off
AssigneeSamsung Electronics Co., Ltd.
InventorsHo-Sung Ahn, Youn-Soo Cheon
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Abstract
Provided herein are a nonvolatile memory device and a method of programming the same. The nonvolatile memory device includes a memory cell array including a plurality of word lines having a first word line and a plurality of memory cells connected to the first word line. The plurality of memory cells includes a plurality of monitoring cells and a plurality of data cells each data cell configured to store N-bit data, N being a natural number. The nonvolatile memory device is configured to perform a first program on the plurality of data cells and a detection program different from the first program on the one or more monitoring cells after performing the first program.
Claims13
A nonvolatile memory device comprising:
- a plurality of memory blocks, each of the plurality of memory blocks including a plurality of memory cells that are connected to a plurality of word lines and include a monitoring cell and a plurality of data cells,
- wherein the nonvolatile memory device is configured such that a first program is performed on the plurality of data cells, and a detection program is performed on the monitoring cell,
- wherein a maximum value of a first threshold voltage of the monitoring cell after the detection program is performed on the monitoring cell is greater than a maximum value of a second threshold voltage of the monitoring cell before the detection program is performed on the monitoring cell,
- wherein the nonvolatile memory device is configured such that a detection voltage for reading the monitoring cell is greater than the maximum value of the second threshold voltage,
- wherein the nonvolatile memory device is configured such that the plurality of data cells is evaluated using a plurality of read voltages, and
- wherein the detection voltage is different from the plurality of read voltages.
A nonvolatile memory device comprising:
- a plurality of memory blocks, each of the plurality of memory blocks including a plurality of memory cells that are connected to a plurality of word lines and include a monitoring cell and a plurality of data cells,
- wherein the nonvolatile memory device is configured such that a first program is performed on the plurality of data cells,
- wherein the nonvolatile memory device is configured such that a detection program is performed on the monitoring cell when the plurality of data cells are inhibited, and
- wherein the nonvolatile memory device is configured to:
- evaluate the plurality of data cells using a plurality of read voltages after performing the first program, and
- evaluate the monitoring cell using a detection voltage different from the plurality of read voltages after performing the detection program.
Dependencies are inferred from the claim text.