Ferroelectric memory plate power reduction
AssigneeMicron Technology, Inc.
InventorsAdam S. El-Mansouri, David L. Pinney
Life of this patent
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Abstract
Methods, systems, and devices for ferroelectric memory plate power reduction are described. A plate line may be coupled with a voltage source, a capacitor, and one or more sections of a bank of ferroelectric memory cells. During a write operation, the capacitor may be discharged onto the plate line and the resulting voltage may be adjusted (e.g., increased) by the voltage source before writing one or more memory cells. During a write-back operation, a capacitor associated with one or more memory cells may be discharged onto the plate line and stored at the capacitor. The charge may be re-applied to the plate line and adjusted (e.g., increased) by the voltage source during the write-back.
Claims20
A method, comprising:
- discharging a ferroelectric memory cell of a first subset of ferroelectric memory cells to a plate line;
- receiving, based at least in part on discharging the ferroelectric memory cell of the first subset of ferroelectric memory cells, a first charge at a capacitor coupled with the plate line;
- and
- applying a first voltage to the ferroelectric memory cell of the first subset of ferroelectric memory cells based at least in part on receiving the first charge.
An apparatus, comprising:
- a ferroelectric memory cell;
- a plate line coupled with the ferroelectric memory cell;
- a capacitor coupled with the plate line;
- and
- a controller coupled with the ferroelectric memory cell, wherein the controller is operable to:
- discharge the ferroelectric memory cell to the plate line, wherein the capacitor is configured to receive a first charge based at least in part on discharging the ferroelectric memory cell to the plate line;
- and
- apply a first voltage to the ferroelectric memory cell based at least in part on the capacitor receiving the first charge.
A method, comprising:
- discharging a ferroelectric memory cell to a plate line;
- charging, based at least in part on discharging the ferroelectric memory cell, a capacitor coupled with the plate line;
- activating, based at least in part on charging the capacitor, a first switching component coupled with the capacitor;
- and
- applying a first voltage to the ferroelectric memory cell based at least in part on activating the first switching component.
Dependencies are inferred from the claim text.