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US 11,699,474 B2Granted
SOT-MRAM with shared selector
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
Life of this patent
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Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
Claims20
A magnetic memory device comprising:
- a first magnetic tunnel junction (MTJ) stack;
- a first spin-orbit torque (SOT) induction wiring disposed on the first MTJ stack;
- a first wiring coupled to a first end of the first SOT induction wiring;
- and a first portion of a selector layer coupled to a second end of the first SOT induction wiring and a second portion of the selector layer coupled to a second end of a second SOT induction wiring, the selector layer extending continuously between the first portion and the second portion.
1 more element
A magnetic memory comprising:
- a write word line wiring;
- and
- a first memory cell, the first memory cell comprising:
- a first magnetic tunnel junction (MTJ) stack,
- a first spin-orbit torque (SOT) induction wiring coupled to a first end of the first MTJ stack, and
- a first selector material coupled between the first SOT induction wiring and the write word line wiring.
3 more elements
A method comprising:
- forming a magnetic tunnel junction (MTJ) film stack over a substrate, the MTJ film stack corresponding to a first memory cell;
- laterally encapsulating the MTJ film stack in a first dielectric layer;
- depositing a spin-orbit torque (SOT) induction wiring over the MTJ film stack;
- depositing a shared selector layer over the SOT induction wiring and coupling the shared selector layer to one end of the SOT induction wiring, the shared selector layer extending over and coupled to an adjacent second memory cell;
- coupling a source line to another end of the SOT induction wiring;
- and
- coupling a write word line to an upper side of the shared selector layer.
4 more elements
Dependencies are inferred from the claim text.