US 11,699,391 B2Granted

Semiconductor device, display apparatus, and electronic device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsHajime Kimura, Takayuki Ikeda

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Abstract

A semiconductor device includes first to tenth transistors and first to fourth capacitors. Gates of the first and the fourth transistors are electrically connected to each other. First terminals of the first, second, fifth, and eighth transistors are electrically connected to a first terminal of the fourth capacitor. A second terminal of the fifth transistor is electrically connected to a gate of the sixth transistor and a first terminal of the second capacitor. A second terminal of the eighth transistor is electrically connected to a gate of the ninth transistor and a first terminal of the third capacitor. Gates of the second, seventh, and tenth transistors are electrically connected to first terminals of the third and fourth transistors and a first terminal of the first capacitor. First terminals of the sixth and seventh transistors are electrically connected to a second terminal of the second capacitor.

Claims14

Dependent claims

A semiconductor device comprising:

a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor;
an eighth transistor;
a ninth transistor;
a tenth transistor;
a first capacitor;
a second capacitor;
a third capacitor;
and
a fourth capacitor,
wherein a first gate of the first transistor is electrically connected to a first gate of the fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the eighth transistor, and a first terminal of the fourth capacitor,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a first gate of the sixth transistor and a first terminal of the second capacitor,
wherein the other of the source and the drain of the eighth transistor is electrically connected to a first gate of the ninth transistor and a first terminal of the third capacitor,
wherein a first gate of the second transistor is electrically connected to a first terminal of the first capacitor, one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, a first gate of the seventh transistor, and a first gate of the tenth transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and
wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.

19 more elements

A semiconductor device comprising:

a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor;
an eighth transistor;
a ninth transistor;
a tenth transistor;
an eleventh transistor;
a first capacitor;
a second capacitor;
and
a third capacitor,
wherein a first gate of the first transistor is electrically connected to one of a source and a drain of the eleventh transistor,
wherein the other of the source and the drain of the eleventh transistor is electrically connected to a first gate of the fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the fifth transistor, and one of a source and a drain of the eighth transistor,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a first gate of the sixth transistor and a first terminal of the second capacitor,
wherein the other of the source and the drain of the eighth transistor is electrically connected to a first gate of the ninth transistor and a first terminal of the third capacitor,
wherein a first gate of the second transistor is electrically connected to a first terminal of the first capacitor, one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, a first gate of the seventh transistor, and a first gate of the tenth transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and
wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.

20 more elements

A semiconductor device comprising:

a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a sixth transistor;
a seventh transistor;
a ninth transistor;
a tenth transistor;
a first capacitor;
a second capacitor;
and
a third capacitor,
wherein a first gate of the first transistor is electrically connected to a first gate of the fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, a first gate of the sixth transistor, a first terminal of the second capacitor, a first gate of the ninth transistor, and a first terminal of the third capacitor,
wherein a first gate of the second transistor is electrically connected to a first terminal of the first capacitor, one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, a first gate of the seventh transistor, and a first gate of the tenth transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and
wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/723,613Filed 19 Apr 2022
Priority: JP 2021-08153213 May 2021
Published: US 2022/0366845 A117 Nov 2022
Granted: 11 Jul 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification19 codes

G09G 3/3225
Organic, e.g. using organic light-emitting diodes [OLED]: using an active matrix
G09G 3/3266
Organic, e.g. using organic light-emitting diodes [OLED]: details of drivers for scan electrodes
G09G 3/006
Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes: electronic inspection or…
G11C 19/28
Digital stores in which the information is moved stepwise, e.g. shift registers: using semiconductor elements