Memory system
AssigneeKioxia Corporation
InventorsKengo Kurose, Masanobu Shirakawa, Marie Takada
Life of this patent
Estimating the term…
Abstract
According to an embodiment, a memory controller obtains first data in a first page using a first voltage, obtains a first shift amount based on a first and second number. The first and second numbers represent numbers of bits each of which has different values in a first and second manner between the first data and first expected data. The controller obtains second data in the second page using a second voltage and a second shift amount, and obtains a third shift amount based on a third and fourth number, the third and fourth numbers respectively represent numbers of bits each of which has different values in the first and second manner between the second data and second expected data.
Claims16
A method of controlling a semiconductor memory, the semiconductor memory including a word line and a plurality of memory cells connected to the word line, each of the memory cells being capable of storing n bit data, n being an integer equal to or larger than 2;
- the method comprising:
- storing n pages of data in the memory cells;
- reading data of a first page of the n pages as first data using a first voltage;
- performing error correction on the first data;
- calculating a first shift amount based on a first number and a second number, the first number representing a number of bits each of which has different values in a first manner between the first data and first expected data obtained by the error correction on the first data, the second number representing a number of bits each of which has different values in a second manner between the first data and the first expected data;
- and
- reading data of a second page of the n pages as second data using a second voltage and a second shift amount, the second shift amount being based on the first shift amount.
Dependencies are inferred from the claim text.