Photonic package device and method for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Hua Chen, Hau-Yan Lu, Wen-Chen Lu
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Abstract
A method for fabricating a photonic package device is provided. The method includes patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and at least one first semiconductor pillar; forming a metal-dielectric stack over the waveguide structure and the first semiconductor pillar; etching an opening in the metal-dielectric stack to expose the first semiconductor pillar; etching an insulator layer of the SOI substrate to form at least one insulator cap below the first semiconductor pillar; and etching a base semiconductor substrate of the SOI substrate to form at least one second semiconductor pillar below the insulator cap.
Claims20
A method for fabricating a photonic package device, comprising:
- patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and at least one first semiconductor pillar;
- forming a metal-dielectric stack over the waveguide structure and the first semiconductor pillar;
- etching an opening in the metal-dielectric stack to expose the first semiconductor pillar;
- etching an insulator layer of the SOI substrate to form at least one insulator cap below the first semiconductor pillar;
- and
- etching a base semiconductor substrate of the SOI substrate to form at least one second semiconductor pillar below the insulator cap.
A method for fabricating a photonic package device, comprising:
- patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and a peripheral structure, wherein the peripheral structure has a first opening and an edge portion adjacent the first opening;
- filling the first opening of the peripheral structure with a dielectric layer;
- forming a metal-dielectric stack over the waveguide structure, the peripheral structure, and the dielectric layer;
- etching a second opening in the metal-dielectric stack to expose the edge portion of the peripheral structure;
- and
- etching an insulator layer and a base substrate of the SOI substrate through the second opening to form a recess in the SOI substrate and an edge supporting structure surrounding the recess.
A photonic package device, comprising:
- a semiconductor substrate comprises at least one semiconductor pillar and a semiconductor structure surrounding the semiconductor pillar;
- a waveguide structure over a first portion of the semiconductor structure of the semiconductor substrate;
- a metal-dielectric stack over the waveguide structure, wherein the semiconductor pillar and a second portion of the semiconductor structure are free from coverage by the metal-dielectric stack;
- and
- a light source device supported by the semiconductor pillar and the second portion of the semiconductor structure.
Dependencies are inferred from the claim text.