Test method and system for testing connectivity of semiconductor structure

A test method for testing connectivity of a semiconductor structure, comprising:

• providing the semiconductor structure and a detection transistor, wherein the semiconductor structure comprises a through silicon via structure having a first terminal and a second terminal which are arranged to be opposite, the detection transistor comprises a detection gate, a first port and a second port, the detection gate is configured to receive a test signal, the first port is configured to receive an operating voltage, and the second port is electrically connected to the first terminal;
• obtaining an intrinsic conductivity factor of the detection transistor, the intrinsic conductivity factor being a product of a carrier mobility and a capacitance of a gate oxide layer per unit area under a condition that the detection transistor operates in a saturation region and a current in the detection transistor is in a first current direction;
• turning the detection transistor on upon receiving the test signal, and providing a test voltage to the second terminal, to enable the current in the detection transistor to be in a second current direction which is opposite to the first current direction, and enable the detection transistor to operate in a deep triode region, and obtaining a current flowing through the second terminal during operation of the detection transistor in the deep triode region;
• and
• obtaining a resistance of the through silicon via structure based on the intrinsic conductivity factor, the operating voltage, the test voltage, and the current flowing through the second terminal.