Method for preparing silicon-carbide-silicon-nitride composite material, and silicon-carbide- silicon-nitride composite material according to same
AssigneeTokai Carbon Korea Co., Ltd
InventorSang Chul Lee
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Abstract
The present invention relates to a method for preparing a SiC—Si3N4 composite material and a SiC—Si3N4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si3N4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si3N4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si3N4, which is a material with a high thermal shock strength, to grow together via a CVD method.
Claims2
A SiC—Si3N4 composite material consisting of a mixture of β-SiC and Si3N4 needle-shaped crystal grains with a thermal shock strength of 600 to 860° C., wherein the Si3N4 in the SiC—Si3N4 composite material is 10 to 70% by volume.
Dependencies are inferred from the claim text.