Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Ren Wang, Shing-Chyang Pan, Yuan-Chih Hsieh
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Abstract
Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.
Claims20
A method for manufacturing an integrated chip, the method comprising:
- forming an interconnect structure over a semiconductor substrate;
- forming an upper dielectric layer over the interconnect structure;
- forming an outgas layer within the upper dielectric layer, wherein the outgas layer comprises a first material that is amorphous;
- and
- forming a microelectromechanical systems (MEMS) substrate over the interconnect structure, wherein the MEMS substrate comprises a moveable structure directly over the outgas layer.
A method for manufacturing an integrated chip, the method comprising:
- depositing an upper dielectric structure over a semiconductor substrate;
- etching the upper dielectric structure to form an opening extending into a top surface of the upper dielectric structure;
- depositing an outgas layer over the upper dielectric structure and within the opening;
- performing a planarization process on the outgas layer to remove excess material of the outgas layer from over the top surface of the upper dielectric structure, thereby forming an outgas structure in the upper dielectric structure;
- forming a dielectric capping layer over a top surface of the outgas structure and the upper dielectric structure;
- forming a plurality of stopper structures extending through the upper dielectric structure and the dielectric capping layer;
- and
- bonding a microelectromechanical systems (MEMS) substrate to the semiconductor substrate.
A method for manufacturing an integrated chip, the method comprising:
- forming an interconnect structure over a semiconductor substrate;
- forming a passivation structure over the interconnect structure;
- forming an outgas layer in the passivation structure, wherein the outgas layer comprises an outgas material with an outgas depletion temperature;
- forming a capping structure comprising a first cavity and a second cavity;
- forming a microelectromechanical systems (MEMS) substrate comprising a first moveable structure and a second moveable structure;
- performing a first bonding process to bond the MEMS substrate to the capping structure, wherein the first bonding process reaches a first maximum bonding temperature less than the outgas depletion temperature;
- and
- performing a second bonding process to bond the MEMS substrate to the interconnect structure, wherein the first cavity overlies the first moveable structure and the second cavity overlies the second moveable structure, wherein the second bonding process reaches a second maximum bonding temperature less than the outgas depletion temperature, and wherein the second bonding process seals the first cavity with a first gas pressure and seals the second cavity with a second gas pressure.
Dependencies are inferred from the claim text.