Hybrid non-volatile memory cell
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Carl Radens, Ruilong Xie, Juntao Li
Life of this patent
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Abstract
A non-volatile memory structure, and methods of manufacture, which may include a first memory element and a second memory element between a first terminal and a second terminal. The first memory element and the second memory element may be in parallel with each other between the first and second terminal. This may enable the hybrid non-volatile memory structure to store values as a combination of the conductance for each memory element, thereby enabling better tuning of set and reset conductance parameters.
Claims22
A non-volatile memory structure comprising:
- a first memory element;
- a second memory element, the first memory element and the second memory element comprise different types of memristive memory;
- a top contact, wherein the top contact is in contact with at least a portion of a top surface of the first memory element, and wherein the top contact is in contact with at least a portion of a top surface of the second memory element;
- and
- a bottom contact, wherein the bottom contact is in contact with at least a portion of a bottom surface of the first memory element, and wherein the bottom contact is in contact with at least a portion of a bottom surface of the second memory element.
A non-volatile memory structure comprising:
- a first terminal of the non-volatile memory structure;
- a second terminal of the non-volatile memory structure;
- and
- a first memory element and a second memory element located in parallel between the first terminal and the second terminal, wherein the first memory element and the second memory element comprise different types of memristive memory.
A non-volatile memory structure comprising:
- a first memory element in parallel with a second memory element, wherein the first memory element comprises a first type of memristor, and wherein the second memory element comprises a second type of memristor;
- and
- a state of the non-volatile memory structure comprises a combination of the states of the first type of memristor and the second type of memristor.
A non-volatile memory structure comprising:
- a first memory element encircling a second memory element, wherein the first memory element and the second memory element comprise different types of memristive memory;
- a spacer located between the first memory element and the second memory element;
- a bottom contact in contact with a bottom surface of the first memory element and a bottom surface of the second memory element;
- and
- a top contact in contact with a top surface of the first memory element and a top surface of the second memory element.
A non-volatile memory structure comprising:
- a first memory element;
- a second memory element, wherein the first memory element comprises a phase change memory, and wherein the second memory element comprises a resistive random-access memory;
- a top contact, wherein the top contact is in contact with at least a portion of a top surface of the first memory element, and wherein the top contact is in contact with at least a portion of a top surface of the second memory element;
- and
- a bottom contact, wherein the bottom contact is in contact with at least a portion of a bottom surface of the first memory element, and wherein the bottom contact is in contact with at least a portion of a bottom surface of the second memory element.
A non-volatile memory structure comprising:
- a first terminal of the non-volatile memory structure;
- a second terminal of the non-volatile memory structure;
- and
- a first memory element and a second memory element located in parallel between the first terminal and the second terminal, wherein the first memory element comprises a phase change memory, and wherein the second memory element comprises a resistive random-access memory.
A non-volatile memory structure comprising:
- a first memory element encircling a second memory element, wherein the first memory element comprises a phase change memory, and wherein the second memory element comprises a resistive random-access memory;
- a spacer located between the first memory element and the second memory element;
- a bottom contact in contact with a bottom surface of the first memory element and a bottom surface of the second memory element;
- and
- a top contact in contact with a top surface of the first memory element and a top surface of the second memory element.
Dependencies are inferred from the claim text.