Transition metal dichalcogenide based magnetoelectric memory device

A system comprising:

• a memory;
• a processor coupled to the memory, the memory or the processor comprising a device comprising:
• a stack comprising a first layer over a second layer, the first layer comprising a magnetoelectric material and the second layer comprising a metal and a chalcogen;
• a magnet adjacent to a first portion of the second layer;
• a first interconnect adjacent to the magnet;
• a second interconnect adjacent to the first layer;
• and
• a third interconnect adjacent to a second portion of the second layer;
• and
• a wireless interface coupled to the processor.

A method comprising:

• forming a stack comprising a first layer over a second layer, the first layer comprising a magnetoelectric material and the second layer comprising a metal and a chalcogen;
• forming a magnet adjacent to a first portion of the second layer;
• forming a first interconnect adjacent to the magnet;
• forming a second interconnect adjacent to the first layer;
• and
• forming a third interconnect adjacent to a second portion of the second layer.