Magnetoresistance effect element and method for manufacturing the same
AssigneeTDK Corporation
InventorsKatsuyuki Nakada, Shinto Ichikawa
Life of this patent
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Abstract
This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0<α≤1, and a range of β is 0.35≤β≤1.7.
Claims15
A magnetoresistance effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a tunnel barrier layer which is interposed between the first and second ferromagnetic layers,
- wherein the tunnel barrier layer has a crystal structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, C and B, and
- in the compositional formula, X represents one or more elements selected from the group consisting if Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0<α≤1, and a range of β is 0.35≤β≤1.7.
A method for manufacturing a magnetoresistance effect element, the method comprising:
- laminating a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer,
- wherein in the lamination of the tunnel barrier layer, one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, C and B, which are ionized or turned into plasma are implanted into the tunnel barrier layer the tunnel barrier layer has a crystal structure represented by a compositional formula X1-αYαOβ, and
- in the compositional formula, X represents one or more elements selected from the group consisting if Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0<α≤1, and a range of β is 0.35≤β≤1.7.
Dependencies are inferred from the claim text.