Back to results
US 11,696,451 B1Granted
Common mode compensation for non-linear polar material based 1T1C memory bit-cell
AssigneeKepler Computing Inc.
InventorsRajeev Kumar Dokania, Noriyuki Sato, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni
Life of this patent
Estimating the term…
Abstract
To compensate switching of a dielectric component of a non-linear polar material based capacitor, an explicit dielectric capacitor is added to a memory bit-cell and controlled by a signal opposite to the signal driven on a plate-line.
Claims20
An apparatus comprising:
- a node;
- a first capacitor comprising non-linear polar material, the first capacitor having a first terminal coupled to the node and a second terminal coupled to a first plate-line;
- a transistor coupled to the node and a bit-line, wherein the transistor is controllable by a word-line;
- and
- a second capacitor coupled to the node and a second plate-line, wherein the second capacitor comprises a linear dielectric.
2 more elements
An apparatus comprising:
- an array of bit-cells organized in rows and columns, wherein an individual bit-cell includes:
- a storage node;
- a first capacitor comprising non-linear polar material, the first capacitor having a first terminal coupled to the storage node and a second terminal coupled to a first plate-line;
- a transistor coupled to the storage node and a bit-line, wherein the transistor is controllable by a word-line;
- and
- a second capacitor coupled to the storage node and a second plate-line, wherein the second capacitor comprises a linear dielectric;
- and
- a driver circuitry to drive a first voltage on the first plate-line and to drive a second voltage on the second plate-line, wherein the first voltage is an inverse of the second voltage.
5 more elements
A system comprising:
- a processor circuitry to execute one or more instructions;
- a memory to store the one or more instructions;
- and
- a communication interface to allow the processor circuitry to communicate with another device, wherein the memory includes:
- a node;
- a first capacitor comprising non-linear polar material, the first capacitor having a first terminal coupled to the node and a second terminal coupled to a first plate-line;
- a transistor coupled to the node and a bit-line, wherein the transistor is controllable by a word-line, and wherein the first plate-line is parallel to the word-line;
- and
- a second capacitor coupled to the node and a second plate-line, wherein the second capacitor comprises a linear dielectric.
6 more elements
Dependencies are inferred from the claim text.