Semiconductor storage device with contact melting prevention

A semiconductor storage device, comprising:

• a memory cell array including a stacked body having a plurality of insulating layers and a plurality of conductive layers are alternately stacked in a first direction, the memory cell array including a cell area that includes a plurality of memory cells and a contact area provided adjacent the cell area in a second direction crossing the first direction;
• a circuit provided below the memory cell array;
• a source layer provided between the memory cell array and the circuit;
• a first contact provided in the contact area, and coupled to the circuit by extending along the first direction through the stacked body;
• a second contact provided over the cell area and the contact area, and coupled to the source layer by extending in the first and second directions;
• a first wiring extending in a third direction crossing the first and second directions;
• a second wiring provided above the second contact, extending in the second direction along the second contact in the contact area, and connected to the first wiring;
• and
• a plurality of third contacts provided between the second wiring and the second contact;
• wherein the cell area further includes a first cell area and a second cell area, the contact area between the first cell area and the second cell area in the second direction.