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US 11,696,444 B2Granted
Semiconductor device and method of fabrication thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorQiguang Wang
Life of this patent
Estimating the term…
Abstract
Aspects of the disclosure provide a semiconductor device and a method to manufacture the semiconductor device. A semiconductor device includes one or more units of strings of cells, and dielectric structures extending in a vertical direction and a first direction perpendicular to the vertical direction and separating adjacent units of strings of cells. Each unit of strings of cells includes a first string of cells each including first cells, and a second string of cells each including second cells.
Claims20
A semiconductor device, comprising:
- one or more units of strings of cells;
- and
- dielectric structures extending in a vertical direction and a first direction perpendicular to the vertical direction and separating adjacent units of strings of cells,
- wherein each unit of strings of cells comprises:
- a first string of cells, each comprising first cells, and
- a second string of cells, each comprising second cells,
- wherein parts of the units of strings of cells are separated by a common source region extending in a second direction perpendicular to the first direction and the vertical direction, wherein the common source region comprises a doped region and a conductive layer on the doped region.
4 more elements
A semiconductor device, comprising:
- one or more units of strings of cells;
- and
- dielectric structures extending in a vertical direction and a first direction perpendicular to the vertical direction and separating adjacent units of strings of cells,
- wherein each unit of strings of cells comprises:
- a first string of cells, each comprising first cells,
- a second string of cells, each comprising second cells,
- a first channel structure extending in the vertical direction comprising a first channel layer and a first gate dielectric structure;
- first gate structures;
- a second channel structure extending in the vertical direction comprising a second channel layer and a second gate dielectric structure;
- second gate structures,
- a second contact electrically connected to the first channel layer;
- and
- a third contact electrically connected to the second channel layer,
- wherein the second contact and the third contact are staggered arranged in a plan view.
11 more elements
Dependencies are inferred from the claim text.