Nonvolatile memory device
AssigneeKey Foundry Co., Ltd.
InventorsMin Kuck Cho, Seung Hoon Lee
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes a cell array formed on a substrate, and a control gate pickup structure, wherein the cell array comprises floating gates, and a control gate surrounding the floating gates, wherein the control gate pickup structure comprises a floating gate polysilicon layer, a control gate polysilicon layer surrounding the floating gate polysilicon layer and connected to the control gate, and at least one contact plug formed on the control gate polysilicon layer.
Claims15
A cell array in a nonvolatile memory device, the cell array comprising:
- a first floating gate of an odd row and a second floating gate of an even row spaced apart from each other and formed on a substrate;
- a first control gate surrounding the first floating gate of the odd row and tilted positively with respect to an X-axis;
- and
- a second control gate surrounding the second floating gate of the even row and tilted negatively with respect to the X-axis.
A cell array in a nonvolatile memory device, the cell array comprising:
- first floating gates disposed in a first row on a substrate;
- second floating gates disposed in a second row;
- a first control gate surrounding the first floating gates, the first control gate comprising first sub-control gates connected to each other, and each of the first sub-control gates being tilted positively with respect to an X-axis;
- and
- a second control gate surrounding the second floating gates, the second control gate comprising second sub-control gates connected to each other, and each of the second sub-control gates being tilted negatively with respect to the X-axis.
A cell array in a nonvolatile memory device, the cell array comprising:
- a first floating gate of an odd row tilted positively with respect to an X-axis on a substrate;
- a second floating gate of an even row tilted negatively with respect to the X-axis, and spaced apart from the first floating gate of the odd row;
- a first control gate surrounding the first floating gate of the odd row;
- and
- a second control gate surrounding the second floating gate of the even row.
Dependencies are inferred from the claim text.