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US 11,696,432 B2Granted
Multi-direction conductive line and staircase contact for semiconductor devices
AssigneeMicron Technology, Inc.
InventorsSi-Woo Lee, Byung Yoon Kim, Kyuseok Lee, Sangmin Hwang, Mark Zaleski
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Abstract
Systems, methods, and apparatus including multi-direction conductive lines and staircase contacts for semiconductor devices. One memory device includes an array of vertically stacked memory cells, the array including: a vertical stack of horizontally oriented conductive lines, each conductive line comprising: a first portion extending in a first horizontal direction; and a second portion extending in a second horizontal direction at an angle to the first horizontal direction.
Claims7
A memory device, comprising:
- an array of vertically stacked memory cells, the array comprising:
- a vertical stack of horizontally oriented conductive lines, a plurality of the horizontally oriented conductive lines comprising:
- a first portion extending in a first horizontal direction;
- and
- a second portion extending in a second horizontal direction at an angle to the first horizontal direction, wherein the second portion of each of the plurality of the horizontally oriented conductive lines is of a length greater than a length of the second portion of a horizontally oriented conductive line on a higher vertical level of the vertical stack;
- and
- interconnections connected to and extending in the first horizontal direction from a sense amplifier, wherein the second portion of each of the plurality of the horizontally oriented conductive lines is coupled to the sense amplifier via a respective interconnection of the interconnections to reduce an amount of space occupied by the interconnections in the first horizontal direction.
4 more elements
Dependencies are inferred from the claim text.